NPT25015D – 14dB Gain RF HEMT MOSFET for Wireless Infrastructure
This NPT25015D RF HEMT MOSFET is a high-performance discrete semiconductor designed for RF applications. First, this NPT25015D RF transistor operates across 0Hz to 3GHz with 14dB gain, combining high efficiency and reliable performance in a compact 8-SOIC package. Second, this NPT25015D RF MOSFET supports both CW and pulsed operation modes, with a 28V test voltage and 5A current rating.
Key Technical Specifications
- Category: Discrete Semiconductor Products | RF FETs, MOSFETs
- Manufacturer: MACOM Technology Solutions
- Technology: GaN HEMT
- Frequency Range: 0Hz ~ 3GHz
- Gain: 14dB
- Supply Voltage: 28V (test), 100V (rated)
- Current Rating: 5A (test current: 200mA)
- Output Power: 1.5W linear power
- Package: 8-SOIC (0.154″, 3.90mm Width) Exposed Pad
- Part Status: Active
- Applications: Wireless infrastructure, defense communications, L-band radar, and avionics
Product Advantages
Furthermore, the NPT25015D RF HEMT MOSFET delivers excellent linearity, with 1.5W linear power at 2% EVM for OFDM signals, making it ideal for modern broadband communication standards. In addition, its robust design and high voltage tolerance make it a reliable choice for high-reliability RF environments, including defense and aerospace applications.
