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| Parameter | Value | Note |
|---|---|---|
| Drain-source Voltage (Vds) | 100V | Maximum voltage rating |
| Continuous Drain Current (Id) | 110A | Maximum continuous operating current |
| Pulsed Drain Current (Idm) | 440A | Short-time peak pulse current |
| On-state Resistance (Rds(on)) | Typ. 3.6mΩ, Max. 4.2mΩ | @Vgs=10V, Id=55A |
| Gate-source Voltage (Vgs Max) | ±20V | Safe gate voltage range |
| Threshold Voltage (Vgs(th)) | 2~4V | @Id=250μA |
| Total Power Dissipation (Ptot) | 250W | @Tc=25℃ |
| Single-pulse Avalanche Energy (Eas) | 650mJ | Avalanche ruggedness capability |
| Gate Charge (Qg) | Approx. 120nC | Affects switching speed and loss |
| Item | Content |
| Manufacturer | STMicroelectronics |
| Part Number | STP150N10F7 |
| Device Type | N-channel Enhancement-mode Power MOSFET |
| Process Series | STripFET™ F7 (Trench-gate Technology) |
| Package | TO-220 (Through-hole Package) |
| Mounting Type | Through Hole |
| Operating/Storage Temperature | -55°C ~ +175°C |
| Part Status | Active |
| Alternative Models | Same series: STI150N10F7 (I²PAK package), STB150N10F7 (D²PAK package)Cross-brand: FHP170N1F4A, FHS170N1F4A, IRF1405, IPB110N10N5 |