PSMN2R3-100SSEJ Nexperia MOSFET | 100V, 2.3mΩ N-Channel LFPAK88 -iccpower

Manufacturer
Nexperia USA Inc.
Manufacturer Product Number
PSMN2R3-100SSEJ
Description
APPLICATION SPECIFIC POWER MOSFE

product detail

Product Attributes
Type
Description
Select All
Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
Nexperia USA Inc.
Series
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current – Continuous Drain (Id) @ 25°C
255A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
17200 pF @ 50 V
FET Feature
Power Dissipation (Max)
341W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Qualification
Mounting Type
Surface Mount
Supplier Device Package
LFPAK88 (SOT1235)
Package / Case
SOT-1235
Base Product Number
PSMN2R3

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