B8R512K8ARH: 512Kx8 Radiation-Hardened SRAM | 17ns High-Speed Memory

Parameter Specification
Part Number B8R512K8ARH
Memory Type SRAM (Static Random Access Memory)
Density 512K × 8 bit
Access Time 17 ns (Ultra-fast)
Voltage 1.8V / 3.3V (Dual-voltage)
Package CFP36 (Ceramic Quad Flat Pack)
Equivalent Model UT8R512K8
Key Feature Radiation-hardened, High-speed
Application Aerospace, Mission-critical Data Buffering

product detail

Parameter Specifications
Part Number B8R512K8ARH
Memory Type SRAM (Static Random Access Memory)
Density 512K × 8 bit (4M-bit)
Access Time 17 ns (High-speed Access)
Voltage Core: 1.8 V / I/O: 3.3 V (Dual-voltage, Low Power)
Logic Level CMOS
Package CFP36 (Ceramic Flat Pack)
Cross Reference UT8R512K8

Related Products

We will provide our partners with the best service, contact us now.

MANAGER

Mio Zhang

Rachel

E-MAIL

sales1@iccpower.com

sales2@iccpower.com

TEL

0755-23997034

15338756980