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| Product Model | Type | Capacity (bit) | Access Time (ns) | Operating Voltage (V) | Input Level | Package Type | Compatible Part Number |
|---|---|---|---|---|---|---|---|
| B8Q1M40RQC | Asynchronous SRAM | 1M × 40 | Read: 20; Write: 10 | Single Supply 3.3V | CMOS | CQFP84 | — |
| Parameter Name | Specification Details |
|---|---|
| Product Model | B8Q1M40RQC |
| Memory Type | Radiation Hardened SRAM |
| Capacity Configuration | 1M × 40 bit (40 Mbit) |
| Bit Width Advantage | 40-bit (supports 32-bit data + 8-bit redundant check) |
| Brand/Manufacturer | BMTI (Beijing Microelectronics Technology Institute / 772 Institute) |
| Application Fields | Aerospace, Nuclear Physics Experimental Equipment, High-Reliability Embedded Systems |
| Package Type | Ceramic Flat Package |