NPTB00004A RF HEMT Transistor
This NPTB00004A RF HEMT Transistor is a high-performance discrete semiconductor from MACOM Technology Solutions. First, this NPTB00004A RF transistor operates across 0Hz to 6GHz with 14.8dB gain, delivering 4W output power at a 28V test voltage in a compact 8-SOIC package. Second, this NPTB00004A RF HEMT supports both CW and pulsed operation modes, with a 1.4A current rating and 100V rated voltage.
Key Technical Specifications
- Category: Discrete Semiconductor Products | RF FETs, MOSFETs
- Manufacturer: MACOM Technology Solutions
- Technology: HEMT
- Frequency Range: 0Hz ~ 6GHz
- Gain: 14.8dB
- Test Voltage: 28 V
- Current Rating: 1.4A (test current: 50 mA)
- Output Power: 4W
- Rated Voltage: 100 V
- Package: 8-SOIC (0.154″, 3.90mm Width)
- Part Status: Obsolete (discontinued)
- Applications: RF communication circuits, wireless infrastructure, and legacy RF design projects
Product Notes
Furthermore, the NPTB00004A RF HEMT Transistor offers stable performance for legacy RF designs, making it ideal for maintenance and repair of existing communication systems. In addition, its 28V operating voltage and 4W output power ensure compatibility with standard RF power supply configurations, supporting efficient integration into high-frequency RF circuits.
