| Logic Resources |
~3 Million Gates |
Suitable for large-scale logic synthesis and complex state machines |
| Process |
0.13μm or 90nm Radiation-Hardened Process |
Balances power consumption and performance |
| Total Ionizing Dose (TID) |
≥ 1 × 10⁵ rad(Si) |
Withstands cumulative radiation in long-life orbit missions |
| Single Event Effect (SEE) |
High SEL (Single Event Latchup) Immunity Threshold |
Extremely high stability, resistant to cosmic ray-induced system crashes |
| Operating Voltage |
Core: Typically 1.5V or 1.2V; I/O: 3.3V/2.5V |
Standard space-grade voltage design |
| Configuration Method |
SRAM-Based Architecture |
Requires external radiation-hardened PROM (e.g., BQ17xx series) |
