PSMN2R3-100SSEJ Nexperia MOSFET | 100V, 2.3mΩ N-Channel LFPAK88 -iccpower

Manufacturer
Nexperia USA Inc.
Manufacturer Product Number
PSMN2R3-100SSEJ
Description
APPLICATION SPECIFIC POWER MOSFE

product detail

Product Attributes
Type
Description
Select All
Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr
Nexperia USA Inc.
Series
–
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current – Continuous Drain (Id) @ 25°C
255A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
17200 pF @ 50 V
FET Feature
–
Power Dissipation (Max)
341W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
–
Qualification
–
Mounting Type
Surface Mount
Supplier Device Package
LFPAK88 (SOT1235)
Package / Case
SOT-1235
Base Product Number
PSMN2R3

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