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Products
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Crystals,Oscillators,Resonators
About Us
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Contact
FAQ
Home
Products
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Discrete Semiconductor Products
/
Transistors
/
NPN Transistor / High Frequency Switching Transistor
/ 3DA5667B
3DA5667B
Key Features
Description
High Power Handling
Designed to manage higher current and voltage loads compared to small-signal transistors.
Rugged Metal Packaging
Ensures superior heat dissipation and mechanical durability in harsh environments.
Low Saturation Voltage
Minimizes power loss during switching operations.
High Reliability
Suitable for continuous operation in industrial power stages.
INQUIRY
product detail
Parameter
Specification
Polarity
NPN
Package Type
Metal Can (TO-39 / TO-5)
Collector-Emitter Voltage (
V
CEO
)
80V – 100V (Typical for B suffix)
Collector Current (
I
C
)
1A – 2A (Peak)
Total Power Dissipation (
P
t
o
t
)
1W – 10W (With Heat Sink)
DC Current Gain (
h
FE
)
40 – 120 (Application specific)
Operating Temperature
−
6
5
∘
C
to
+
17
5
∘
C
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Mio Zhang
Rachel
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