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| Product Model | Type | Capacity (bit) | Access Time (ns) | Operating Voltage (V) | Input Level | Package Type | Compatible Part Number |
|---|---|---|---|---|---|---|---|
| B8Q2M40RQC | Asynchronous SRAM | 2M × 40 | Read: 20; Write: 10 | Single Supply 3.3V | CMOS | CQFP84 | — |
| Parameter Name | Specification Details |
|---|---|
| Product Model | B8Q2M40RQC |
| Memory Type | Radiation Hardened SRAM |
| Capacity Configuration | 2M × 40 bit (80 Mbit) |
| Bit Width Advantage | 40-bit (Supports 32-bit data + high redundancy check bits) |
| Brand/Manufacturer | BMTI (Beijing Microelectronics Technology Institute / 772 Institute) |
| Application Fields | Satellite High-Capacity Data Buffering, On-Board Computer Main Memory, High-Energy Physics Equipment |
| Package Type | High-Reliability Ceramic Package |